Modeling of ultra-low energy boron implantation in silicon

被引：21

作者：

Hobler, G ^{[1
]}

Vuong, HH ^{[1
]}

Bevk, J ^{[1
]}

Agarwal, A ^{[1
]}

Gossmann, HJ ^{[1
]}

Foad, M ^{[1
]}

Murrell, A ^{[1
]}

Erokhin, Y ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monte Carlo simulations of 0.25-2 keV B implantations are shown to agree well with molecular dynamics simulations and SIMS data. The tails of point responses and dopant distributions at mask edges are found to be dominated by [110] channeling and to have only a slight dependence on tilt angle. A 3-D analytical model is proposed which approximates the Monte Carlo distributions well.

引用

页码：489 / 492

页数：4

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