Modeling of ultra-low energy boron implantation in silicon

被引：21

作者：

Hobler, G ^{[1
]}

Vuong, HH ^{[1
]}

Bevk, J ^{[1
]}

Agarwal, A ^{[1
]}

Gossmann, HJ ^{[1
]}

Foad, M ^{[1
]}

Murrell, A ^{[1
]}

Erokhin, Y ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monte Carlo simulations of 0.25-2 keV B implantations are shown to agree well with molecular dynamics simulations and SIMS data. The tails of point responses and dopant distributions at mask edges are found to be dominated by [110] channeling and to have only a slight dependence on tilt angle. A 3-D analytical model is proposed which approximates the Monte Carlo distributions well.

引用

页码：489 / 492

页数：4

共 50 条

[21] Low energy boron implantation in silicon and room temperature diffusion
Collart, EJH
Weemers, K
Cowern, NEB
Politiek, J
Bancken, PHL
van Berkum, JGM
Gravesteijn, DJ
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 139 (1-4): : 98 - 107
[22] Local damage accumulation model for ultra-low energy ion implantation
Kang, JW
Lee, KW
Hwang, HJ
PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY, 1999, 99 (02): : 87 - 95
[23] Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation
Agarwal, A
Eaglesham, DJ
Gossmann, HJ
Pelaz, L
Herner, SB
Jacobson, DC
Haynes, TE
Erokhin, YE
SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 1232 - 1240
[24] Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon
Agarwal, A
Gossmann, HJ
Eaglesham, DJ
Pelaz, L
Herner, SB
Jacobson, DC
Haynes, TE
Simonton, R
SOLID-STATE ELECTRONICS, 1998, 42 (05) : A17 - A25
[25] Anomalous diffusion of ultra low energy boron implants in silicon
Webb, RP
Foad, MA
Gwilliam, RM
Knights, AP
Thomas, G
DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 59 - 63
[26] Activation and deactivation in heavily boron-doped silicon using ultra-low-energy ion implantation
Hong, WE
Ro, JS
JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)
[27] Ultra-low energy SIMS study of ultra-shallow boron implants in HPHT diamond
de la Mata, BG
Dowsett, MG
Palitsin, V
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (11): : 2148 - 2153
[28] Ultra-low energy antihydrogen
Holzscheiter, MH
Charlton, M
REPORTS ON PROGRESS IN PHYSICS, 1999, 62 (01) : 1 - 60
[29] Laterally controlled ultra-low energy ion implantation using electrostatic masking
Auge, M.
Junge, F.
Hofsaess, H.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2022, 512 : 96 - 101
[30] LOW-ENERGY BORON IMPLANTATION IN ISOTOPICALLY PURE SILICON BY SIMULATION
TSATIS, DE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 648 - 650

← 1 2 3 4 5 →