Structure stability of short-period InAs/AlSb superlattices

被引：5
|
作者：
Xu, DP [1 ]
Litvinchuk, AP [1 ]
Wang, X [1 ]
Delaney, A [1 ]
Le, H [1 ]
Pei, SS [1 ]
机构：
[1] Univ Houston, Dept Elect & Comp Engn, Texas Ctr Supercond & Adv Mat, Houston, TX 77204 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
infrared spectroscopy; Raman scattering; X-ray diffraction; molecular beam epitaxy; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(02)02395-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The structure stability of short-period InAs/AlSb superlattices (SLs) grown by molecular beam epitaxy was examined by X-ray diffraction, Raman scattering and far-infrared reflectance spectroscopy. The combination of these techniques allowed us to identify modification of the structure properties of InAs/AlSb SLs annealed at various temperatures. Pronounced structure degradation was detected upon short annealing at temperatures as low as 490degreesC. Significant strain relaxation was also observed. These experimental results are understood on the basis of As/Sb exchange during annealing. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：547 / 550
页数：4
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