Structure stability of short-period InAs/AlSb superlattices

被引：5

作者：

Xu, DP ^{[1
]}

Litvinchuk, AP ^{[1
]}

Wang, X ^{[1
]}

Delaney, A ^{[1
]}

Le, H ^{[1
]}

Pei, SS ^{[1
]}

机构：

[1] Univ Houston, Dept Elect & Comp Engn, Texas Ctr Supercond & Adv Mat, Houston, TX 77204 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

infrared spectroscopy; Raman scattering; X-ray diffraction; molecular beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(02)02395-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The structure stability of short-period InAs/AlSb superlattices (SLs) grown by molecular beam epitaxy was examined by X-ray diffraction, Raman scattering and far-infrared reflectance spectroscopy. The combination of these techniques allowed us to identify modification of the structure properties of InAs/AlSb SLs annealed at various temperatures. Pronounced structure degradation was detected upon short annealing at temperatures as low as 490degreesC. Significant strain relaxation was also observed. These experimental results are understood on the basis of As/Sb exchange during annealing. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：547 / 550

页数：4

共 50 条

[21] Intrinsic optical anisotropy of [001]-grown short-period InAs/GaSb superlattices
Li, L. L.
Xu, W.
Peeters, F. M.
PHYSICAL REVIEW B, 2010, 82 (23):
[22] Growth of short-period InAs/GaSb superlattices for mid-infrared photodetectors
Haugan, H. J.
Brown, G. J.
Mahalingam, K.
Elhamri, S.
Mitchel, W. C.
Grazulis, L.
Shank, J. M.
Houston, S.
INFRARED DETECTORS AND FOCAL PLANE ARRAYS VIII, 2006, 6295
[23] Quantification of atomic intermixing in short-period InAs/GaSb superlattices for infrared photodetectors
1600, American Institute of Physics Inc. (113):
[24] Quantification of atomic intermixing in short-period InAs/GaSb superlattices for infrared photodetectors
Ashuach, Y.
Kauffmann, Y.
Saguy, C.
Grossman, S.
Klin, O.
Weiss, E.
Zolotoyabko, E.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (18)
[25] Phase stability, piezoelectricity, and ferroelectricity in nitride short-period superlattices
Zhao, Ling-Xu
Liu, Jian
JOURNAL OF APPLIED PHYSICS, 2024, 136 (02)
[26] InAs/AlSb heterostructure field-effect transistors using a Si-doped InAs/AlSb short-period superlattice modulation doping barrier
Bolognesi, CR
Dvorak, MW
Chow, DH
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (02): : 843 - 845
[27] Interband transitions of InAs/AlAs Short-Period superlattices grown by molecular beam epitaxy
Yao, Lu
Wang, Wenyang
Yao, Jinshan
Lu, Kechao
Lu, Hong
Zheng, Changcheng
Chen, Baile
JOURNAL OF CRYSTAL GROWTH, 2023, 605
[28] THEORY OF EXCITONS IN SHORT-PERIOD SUPERLATTICES
WHITTAKER, DM
PHYSICAL REVIEW B, 1990, 41 (05): : 3238 - 3241
[29] Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors
Zolotoyabko, E., 1600, American Institute of Physics Inc. (116):
[30] Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors
Ashuach, Y.
Lakin, E.
Saguy, C.
Kaufmann, Y.
Zolotoyabko, E.
JOURNAL OF APPLIED PHYSICS, 2014, 116 (12)

← 1 2 3 4 5 →