Test/Repair area overhead reduction for small embedded SRAMs

被引:0
|
作者
Wang, Baosheng [1 ]
Xu, Qiang [2 ]
机构
[1] ATI Technol Inc, 1 Commerce Valley Dr E, Markham, ON L3T 7X6, Canada
[2] Chinese Univ Hong Kong, Dept Comp Sci & Engn, Shatin, Hong Kong, Peoples R China
关键词
embedded small SRAMs; area overhead; BIST; single-element repair;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
For current highly-integrated and memory-dominant System-on-a-Chips (SoCs), especially for graphics and networking SoCs, the test/repair area overhead of embedded SRAMs (e-SRAMs) is a big concern. This paper presents various approaches to tackle this problem from a practical point of view. Without sacrificing at-speed testability, diagnosis capability and repairability, the proposed approaches consider partly sharing wrapper for identical memories, sharing memory BIST controllers for eSRAMs embedded in different functional blocks, test responses compression for wide memories, and various repair strategies for e-SRAMs with different configurations. By combining the above approaches, the test/repair area overhead for e-SRAMs can be significantly reduced. For example, for one benchmark SoC used in our experiments, it can be reduced as much as 10% of the entire memory array.
引用
收藏
页码:37 / +
页数:2
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