Oscillator-Based Reactance Sensors With Injection Locking for High-Throughput Flow Cytometry Using Microwave Dielectric Spectroscopy

被引:68
|
作者
Chien, Jun-Chau [1 ]
Niknejad, Ali M. [1 ,2 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Berkeley Wireless Res Ctr BWRC, Berkeley, CA USA
关键词
Capacitive sensor; dielectric spectroscopy; flow cytometry; injection-locked oscillators (ILOs); interferometry; microfluidics; nested chopping; permittivity; PHASE NOISE; IMPEDANCE CYTOMETRY; CHEMICAL SENSOR; COUPLED QVCO; SINGLE; CELLS; ARRAY;
D O I
10.1109/JSSC.2015.2500362
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the analysis and design of oscillator-based reactance sensors employing injection locking for high-throughput label-free single-cell analysis using dielectric spectroscopy at microwave frequencies. By injection-locking two sensing LC-oscillators with an I/Q excitation source, the measurement of the sample-induced frequency shift caused by the interaction with the electromagnetic fields is performed through phase detection with injection-strength-dependent transducer gain. Such inherent phase amplification offered by the injection locking not only relaxes the design requirement for the readout circuits but also maintains the highest rejection against common-mode errors associated with the drift of the supply voltage and the environmental parameters. To reduce flicker noise contribution, a chopping technique employing phase modulation is exploited. In addition, this paper presents a novel ping-pong chopping approach to alleviate chopping-induced dc offset. In this prototype, four sensing channels, covering frequencies between 6.5 and 30 GHz, are distributed along a microfluidic channel fabricated with standard photolithography. Measurements show that the proposed microwave capacitive sensors achieve a sub-aF(rms) of noise sensitivity at 100 kHz filtering bandwidth, enabling measurement throughput exceeding 1 k cells/s. The sensor prototype is implemented in 65 nm CMOS technology and consumes 65 mW at 1 V supply.
引用
收藏
页码:457 / 472
页数:16
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