Mapping of Si/SiC p-n heterojunctions using scanning internal photoemission microscopy

被引：16
|
作者：
Shingo, Masato [1 ]
Liang, Jianbo [2 ]
Shigekawa, Naoteru [2 ]
Arai, Manabu [3 ]
Shiojima, Kenji [1 ]
机构：
[1] Univ Fukui, Grad Sch Elect & Elect Engn, Fukui 9108507, Japan
[2] Osaka City Univ, Grad Sch Engn, Osaka 5588585, Japan
[3] New Japan Radio Co Ltd, Saitama 3568510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期
关键词：
ROOM-TEMPERATURE; INTERFACE CURRENT; BONDING STRENGTH; WAFERS; TRANSISTOR;
D O I：
10.7567/JJAP.55.04ER15
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrated the two-dimensional characterization of p(+)-Si/n(-)-SiC heterointerfaces by scanning internal photoemission microscopy (SIPM). In internal photoemission spectra, a linear relationship was found between the square root of photoyield (Y) and photon energy, and the threshold energy (qV(th)) was reasonably obtained to be 1.34 eV. From the SIPM results, Y and qV(th) maps were successfully obtained, and nanometer-deep gaps in the junction were sensitively visualized as a pattern. These results suggest that this method is a powerful tool for investigating the inhomogeneity of heterojunctions as well as their carrier transport properties. (C) 2016 The Japan Society of Applied Physics
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页数：4
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