Mapping of Si/SiC p-n heterojunctions using scanning internal photoemission microscopy

被引：16
|
作者：
Shingo, Masato [1 ]
Liang, Jianbo [2 ]
Shigekawa, Naoteru [2 ]
Arai, Manabu [3 ]
Shiojima, Kenji [1 ]
机构：
[1] Univ Fukui, Grad Sch Elect & Elect Engn, Fukui 9108507, Japan
[2] Osaka City Univ, Grad Sch Engn, Osaka 5588585, Japan
[3] New Japan Radio Co Ltd, Saitama 3568510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期
关键词：
ROOM-TEMPERATURE; INTERFACE CURRENT; BONDING STRENGTH; WAFERS; TRANSISTOR;
D O I：
10.7567/JJAP.55.04ER15
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrated the two-dimensional characterization of p(+)-Si/n(-)-SiC heterointerfaces by scanning internal photoemission microscopy (SIPM). In internal photoemission spectra, a linear relationship was found between the square root of photoyield (Y) and photon energy, and the threshold energy (qV(th)) was reasonably obtained to be 1.34 eV. From the SIPM results, Y and qV(th) maps were successfully obtained, and nanometer-deep gaps in the junction were sensitively visualized as a pattern. These results suggest that this method is a powerful tool for investigating the inhomogeneity of heterojunctions as well as their carrier transport properties. (C) 2016 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 50 条
  • [31] ZnSe nanowire/Si p-n heterojunctions: device construction and optoelectronic applications
    Zhang, Xiwei
    Zhang, Xiujuan
    Wang, Liu
    Wu, Yiming
    Wang, Yan
    Gao, Peng
    Han, Yuanyuan
    Jie, Jiansheng
    NANOTECHNOLOGY, 2013, 24 (39)
  • [32] Construction of ZnTe nanowires/Si p-n heterojunctions for electronic and optoelectronic applications
    Wu, Di
    Xu, Tingting
    Shi, Zhifeng
    Tian, Yongtao
    Li, Xinjian
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 661 : 231 - 236
  • [33] Defect observations of Ni/AlGaN/GaN Schottky contacts on Si substrates using scanning internal photoemission microscopy
    Shiojima, Kenji
    Konishi, Hiroaki
    Imadate, Hiroyoshi
    Yamaoka, Yuya
    Matsumoto, Kou
    Egawa, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [34] Observations of inhomogeneity of 3C-SiC layers grown on 6H-SiC substrates by using scanning internal photoemission microscopy
    Shiojima, Kenji
    Mishina, Naoki
    Ichikawa, Naoto
    Kato, Masashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [35] On selenium p-n heterojunctions and Schottky contacts
    Moench, Winfried
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (02) : 1097 - 1101
  • [36] Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy-difference in electrolytes
    Shiojima, Kenji
    Matsuda, Ryo
    Horikiri, Fumimasa
    Narita, Yoshinobu
    Fukuhara, Noboru
    Mishima, Tomoyoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SC)
  • [37] CHARACTERIZATION OF P-N SI1-XGEX/SI HETEROJUNCTIONS GROWN BY LIMITED REACTION PROCESSING
    KING, CA
    HOYT, JL
    GRONET, CM
    GIBBONS, JF
    SCOTT, MP
    ROSNER, SJ
    REID, G
    LADERMAN, S
    NAUKA, K
    KAMINS, TI
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2454 - 2454
  • [38] Electrostatics of Nanowire Radial p-n Heterojunctions
    Borblik, Vitalii
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (07) : 4022 - 4027
  • [39] SUPERINJECTION IN STRUCTURES WITH SEPARATE P-N AND HETEROJUNCTIONS
    BEKIREV, UA
    SURIS, RA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 928 - 932
  • [40] PHOTOVOLTAIC CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS
    DONNELLY, JP
    MILNES, AG
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (04) : 295 - &
12345