Mapping of Si/SiC p-n heterojunctions using scanning internal photoemission microscopy

被引：16

作者：

Shingo, Masato ^{[1
]}

Liang, Jianbo ^{[2
]}

Shigekawa, Naoteru ^{[2
]}

Arai, Manabu ^{[3
]}

Shiojima, Kenji ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Elect & Elect Engn, Fukui 9108507, Japan

[2] Osaka City Univ, Grad Sch Engn, Osaka 5588585, Japan

[3] New Japan Radio Co Ltd, Saitama 3568510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期

关键词：

ROOM-TEMPERATURE; INTERFACE CURRENT; BONDING STRENGTH; WAFERS; TRANSISTOR;

D O I：

10.7567/JJAP.55.04ER15

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated the two-dimensional characterization of p(+)-Si/n(-)-SiC heterointerfaces by scanning internal photoemission microscopy (SIPM). In internal photoemission spectra, a linear relationship was found between the square root of photoyield (Y) and photon energy, and the threshold energy (qV(th)) was reasonably obtained to be 1.34 eV. From the SIPM results, Y and qV(th) maps were successfully obtained, and nanometer-deep gaps in the junction were sensitively visualized as a pattern. These results suggest that this method is a powerful tool for investigating the inhomogeneity of heterojunctions as well as their carrier transport properties. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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