Optical properties of InN films grown by MBE at different conditions

被引：0
|
作者：
Chen, PP [1 ]
Makino, H [1 ]
Wang, JB [1 ]
Li, TX [1 ]
Lu, W [1 ]
Yao, T [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2004年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InN films were grown by N-2 plasma-assisted molecular beam epitaxy (MBE) on Al2O3 substrate with different growth temperature T-s (from 200 degreesC to 500 degreesC). It was found that high crystal quality of InN films can be grown at higher temperature. The optical absorption measurement showed the band-gap energy of InN films decreases with increasing of the growth temperature. The photo-luminescence measurement indicated the band gap of InN films grown at 500 degreesC was located about 1.0-1.1 eV.
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页码：431 / 432
页数：2
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