Optical properties of InN films grown by MBE at different conditions

被引：0

作者：

Chen, PP ^{[1
]}

Makino, H ^{[1
]}

Wang, JB ^{[1
]}

Li, TX ^{[1
]}

Lu, W ^{[1
]}

Yao, T ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InN films were grown by N-2 plasma-assisted molecular beam epitaxy (MBE) on Al2O3 substrate with different growth temperature T-s (from 200 degreesC to 500 degreesC). It was found that high crystal quality of InN films can be grown at higher temperature. The optical absorption measurement showed the band-gap energy of InN films decreases with increasing of the growth temperature. The photo-luminescence measurement indicated the band gap of InN films grown at 500 degreesC was located about 1.0-1.1 eV.

引用

页码：431 / 432

页数：2

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