Transconductance Enhancement Dependence on the Channel Length of CESL-Strained nMOSFETs

被引：0
|
作者：
Chang, Wen-Teng [1 ]
Kuo, Pin-Hung [1 ]
机构：
[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung, Taiwan
来源：
PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON INTELLIGENT TECHNOLOGIES AND ENGINEERING SYSTEMS (ICITES2013) | 2014年 / 293卷
关键词：
Contact etch stop layer (CESL); Transconductance; Threshold voltage; Channel length; SOI MOSFETS; N-MOSFETS; TENSILE; TRANSISTORS;
D O I：
10.1007/978-3-319-04573-3_33
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
Stress is distributed unequally along channels by both uniaxial and biaxial stressors. This study investigated channel-length-related performance enhancement by using contact etching stop layer (CESL) as the stressor. Devices with low tensile (L.T.) and high tensile (H.T.) stresses use CESLs with different thicknesses on nMOSFETs. Results indicate that transconductance enhances the shortest channel in H.T. devices compared with L.T. devices. The threshold voltage difference between L.T. and H.T. nMOSFETs verifies the high stress in H.T. nMOSFETs. However, this threshold voltage difference cannot verify the considerable decrease in the threshold voltage of the shortest channel of H.T. devices compared with L.T. devices.
引用
收藏
页码：269 / 274
页数：6
相关论文
共 50 条
  • [31] Temperature dependence of channel mobility in HfO2-gated NMOSFETS
    Zhu, WJ
    Ma, TP
    IEEE ELECTRON DEVICE LETTERS, 2004, 25 (02) : 89 - 91
  • [32] Implementation of the Temperature and Narrow Channel Dependence on Threshold Voltage Model of NMOSFETs
    Ruangphanit, A.
    Sakuna, N.
    Niemcharoen
    Phinyo, B.
    Muanghlua, R.
    2014 FOURTH JOINT INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGY, ELECTRONIC AND ELECTRICAL ENGINEERING (JICTEE 2014), 2014,
  • [33] Electron mobility enhancement in STRAINED-germanium NMOSFETs and impact of strain engineering in ballistic regime
    Yang, Y. -J.
    Chang, S. T.
    Liu, C. W.
    2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2007, : 130 - +
  • [34] Optimization of SiN film by varying precursor flow conditions and its impacts on strained channel NMOSFETs
    Lu, Ching-Sen
    Lin, Horng-Chih
    Huang, Tiao-Yuan
    EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 117 - 120
  • [35] Channel design and mobility enhancement in strained germanium buried channel MOSFETs
    Shang, H
    Chu, JO
    Wang, X
    Mooney, PM
    Lee, K
    Ott, J
    Rim, K
    Chan, K
    Guarini, K
    Ieong, M
    2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2004, : 204 - 205
  • [36] Substrate Doping Concentration Dependence of Electron Mobility using the Effective Deformation Potential in Uniaxial Strained nMOSFETs
    Sun, Wookyung
    Shin, Hyungsoon
    2013 IEEE INTERNATIONAL CONFERENCE OF IEEE REGION 10 (TENCON), 2013,
  • [37] Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure
    赵迪
    罗谦
    王向展
    于奇
    崔伟
    谭开洲
    JournalofSemiconductors, 2015, 36 (01) : 105 - 108
  • [38] Empirical Model for the Transconductance-Current Dependence of Short-Channel MOSFETs
    Prodanov, Vladimir I.
    2012 IEEE 55TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2012, : 290 - 293
  • [39] Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure
    Zhao Di
    Luo Qian
    Wang Xiangzhan
    Yu Qi
    Cui Wei
    Tan Kaizhou
    JOURNAL OF SEMICONDUCTORS, 2015, 36 (01)
  • [40] A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
    Procel, L. M.
    Crupi, F.
    Trojman, L.
    Franco, J.
    Kaczer, B.
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (01) : 98 - 100
12345