Implementation of the Temperature and Narrow Channel Dependence on Threshold Voltage Model of NMOSFETs

被引：0
|
作者：
Ruangphanit, A. [1 ,2 ]
Sakuna, N. [1 ]
Niemcharoen [1 ]
Phinyo, B. [2 ]
Muanghlua, R. [1 ]
机构：
[1] King Mongkuts Inst Technol, Fac Engn, Dept Elect Engn, Bangkok, Thailand
[2] Natl Sci & Technol Dev Agcy, Natl Elect & Comp Technol Ctr, Pathum Thani 12120, Thailand
来源：
2014 FOURTH JOINT INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGY, ELECTRONIC AND ELECTRICAL ENGINEERING (JICTEE 2014) | 2014年
关键词：
NMOS; MOSFETs; BSIM3;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new simplify mismatch of temperature and narrow channel dependence of threshold voltage of NMOS developed from spice level 3 and BSIM3 are proposed. The I-DS - V-GS in linear region was used with a different channel width. The parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. In this model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET and a narrow channel width of MOSFET are determined. The results show that, the deviation of threshold voltage from the predicted model compared with the experimental data is less than 5%.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Development A Novel Model of Threshold Voltage of NMOS with Temperature Dependence and Narrow Channel Width
    Ruangphanit, A.
    Poyai, A.
    Muanghlua, R.
    Niemcharoen, S.
    Titiroongruang, W.
    2016 13TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING/ELECTRONICS, COMPUTER, TELECOMMUNICATIONS AND INFORMATION TECHNOLOGY (ECTI-CON), 2016,
  • [2] A GEOMETRICAL MODEL OF THE THRESHOLD VOLTAGE OF SHORT AND NARROW CHANNEL MOSFETS
    JANTSCH, O
    SOLID-STATE ELECTRONICS, 1982, 25 (01) : 59 - 61
  • [3] AN EMPIRICAL-MODEL FOR THE THRESHOLD VOLTAGE OF ENHANCEMENT NMOSFETS
    PARK, HJ
    KIM, CK
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (04) : 629 - 635
  • [4] A SIMPLE-MODEL OF THE THRESHOLD VOLTAGE OF SHORT AND NARROW CHANNEL MOSFETS
    MERCKEL, G
    SOLID-STATE ELECTRONICS, 1980, 23 (12) : 1207 - 1213
  • [5] A Compact Threshold Voltage Model for Narrow Channel Nano-Scale MOSFETs
    Pandit, Srabanti
    Sarkar, Chandan Kumar
    2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009), 2009, : 120 - 123
  • [6] Threshold voltage model for bulk strained-silicon NMOSFETs
    Tinoco, J. C.
    Garcia, R.
    Niguez, B. I.
    Cerdeira, A.
    Estrada, M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (03)
  • [7] A UNIFIED CURRENT VOLTAGE MODEL FOR LONG-CHANNEL NMOSFETS
    PARK, CK
    LEE, CY
    LEE, K
    MOON, BJ
    BYUN, YH
    SHUR, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) : 399 - 406
  • [8] THRESHOLD VOLTAGE MODEL FOR NARROW WIDTH MOSFETS
    OH, SH
    USMAN, A
    SANCHEZ, JJ
    DEMASSA, TA
    SOLID-STATE ELECTRONICS, 1993, 36 (09) : 1251 - 1260
  • [9] Temperature dependence of channel mobility in HfO2-gated NMOSFETS
    Zhu, WJ
    Ma, TP
    IEEE ELECTRON DEVICE LETTERS, 2004, 25 (02) : 89 - 91
  • [10] Analytical unified threshold voltage model of short-channel FinFETs and implementation
    Fasarakis, N.
    Tsormpatzoglou, A.
    Tassis, D. H.
    Dimitriadis, C. A.
    Papathanasiou, K.
    Jomaah, J.
    Ghibaudo, G.
    SOLID-STATE ELECTRONICS, 2011, 64 (01) : 34 - 41
12345