Implementation of the Temperature and Narrow Channel Dependence on Threshold Voltage Model of NMOSFETs

被引：0
|
作者：
Ruangphanit, A. [1 ,2 ]
Sakuna, N. [1 ]
Niemcharoen [1 ]
Phinyo, B. [2 ]
Muanghlua, R. [1 ]
机构：
[1] King Mongkuts Inst Technol, Fac Engn, Dept Elect Engn, Bangkok, Thailand
[2] Natl Sci & Technol Dev Agcy, Natl Elect & Comp Technol Ctr, Pathum Thani 12120, Thailand
来源：
2014 FOURTH JOINT INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGY, ELECTRONIC AND ELECTRICAL ENGINEERING (JICTEE 2014) | 2014年
关键词：
NMOS; MOSFETs; BSIM3;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new simplify mismatch of temperature and narrow channel dependence of threshold voltage of NMOS developed from spice level 3 and BSIM3 are proposed. The I-DS - V-GS in linear region was used with a different channel width. The parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. In this model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET and a narrow channel width of MOSFET are determined. The results show that, the deviation of threshold voltage from the predicted model compared with the experimental data is less than 5%.
引用
收藏
页数：5
相关论文
共 50 条
  • [41] Analytic Threshold Voltage Model of Recessed Channel MOSFETs
    Kwon, Yongmin
    Kang, Yeonsung
    Lee, Sanghoon
    Park, Byung-Gook
    Shin, Hyungcheol
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2010, 10 (01) : 61 - 65
  • [42] SHORT-CHANNEL MOST THRESHOLD VOLTAGE MODEL
    RATNAKUMAR, KN
    MEINDL, JD
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (05) : 937 - 948
  • [43] Threshold voltage model of strained Si channel nMOSFET
    Zhang Zhi-Feng
    Zhang He-Ming
    Hu Hui-Yong
    Xuan Rong-Xi
    Song Jian-Jun
    ACTA PHYSICA SINICA, 2009, 58 (07) : 4948 - 4952
  • [44] Analysis of threshold voltage temperature coefficient for short channel MOSFETS
    Ke, Daoming, 1600, Chinese Institute of Electronics, Beijing, China (23):
  • [45] TEMPERATURE-DEPENDENT THRESHOLD VOLTAGE MODEL FOR A NONUNIFORMLY DOPED SHORT-CHANNEL MOSFET
    KHANNA, MK
    HALDAR, S
    GUPTA, RS
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 77 (03) : 283 - 290
  • [46] Effects of total ionizing dose on narrow-channel SOI NMOSFETs
    Ning Bing-Xu
    Hu Zhi-Yuan
    Zhang Zheng-Xuan
    Bi Da-Wei
    Huang Hui-Xiang
    Dai Ruo-Fan
    Zhang Yan-Wei
    Zou Shi-Chang
    ACTA PHYSICA SINICA, 2013, 62 (07)
  • [47] Temperature dependence of output voltage generated by interaction of threshold voltage and mobility of an NMOS transistor
    Filanovsky, IM
    Allam, A
    Lim, ST
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2001, 27 (03) : 229 - 238
  • [48] Temperature Dependence of Output Voltage Generated by Interaction of Threshold Voltage and Mobility of an NMOS Transistor
    I. M. Filanovsky
    A. Allam
    Su Tarn Lim
    Analog Integrated Circuits and Signal Processing, 2001, 27 (3) : 229 - 238
  • [49] Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs
    Liu, Shenghou
    Cai, Yong
    Gong, Rumin
    Wang, Jinyan
    Zeng, Chunhong
    Shi, Wenhua
    Feng, Zhihong
    Wang, Jingjing
    Yin, Jiayun
    Wen, Cheng P.
    Qin, Hua
    Zhang, Baoshun
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 879 - 882
  • [50] MODEL FOR THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD VOLTAGE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS
    SUBRAMANIAN, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 865 - 870
12345