Implementation of the Temperature and Narrow Channel Dependence on Threshold Voltage Model of NMOSFETs

被引：0
|
作者：
Ruangphanit, A. [1 ,2 ]
Sakuna, N. [1 ]
Niemcharoen [1 ]
Phinyo, B. [2 ]
Muanghlua, R. [1 ]
机构：
[1] King Mongkuts Inst Technol, Fac Engn, Dept Elect Engn, Bangkok, Thailand
[2] Natl Sci & Technol Dev Agcy, Natl Elect & Comp Technol Ctr, Pathum Thani 12120, Thailand
来源：
2014 FOURTH JOINT INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGY, ELECTRONIC AND ELECTRICAL ENGINEERING (JICTEE 2014) | 2014年
关键词：
NMOS; MOSFETs; BSIM3;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new simplify mismatch of temperature and narrow channel dependence of threshold voltage of NMOS developed from spice level 3 and BSIM3 are proposed. The I-DS - V-GS in linear region was used with a different channel width. The parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. In this model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET and a narrow channel width of MOSFET are determined. The results show that, the deviation of threshold voltage from the predicted model compared with the experimental data is less than 5%.
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页数：5
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