Nondestructive measurement of thickness and carrier concentration of GaAs epitaxial layer using infrared spectroscopic ellipsometry

被引：9
|
作者：
Nakano, H [1 ]
Sakamoto, T [1 ]
Taniguchi, K [1 ]
机构：
[1] Osaka Univ, Dept Elect & Informat Syst, Osaka 565, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 03期
关键词：
D O I：
10.1063/1.366841
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This article reports a method for evaluating thickness and the carrier concentration of n type GaAs epitaxial layers simultaneously by employing nondestructive, contactless infrared spectroscopic ellipsometry. The carrier concentration N-c and layer thickness d were correctly measured for carrier concentration over 5 X 10(17) cm(-3) with the method by simply assuming the plasma oscillation of free carriers and a step function carrier profile. (C) 1998 American Institute of Physics. [S0021-8979(98)01003-2].
引用
收藏
页码：1384 / 1389
页数：6
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