Composition Measurement of Tri-layer SiGe Stack using Broadband Spectroscopic Ellipsometry

被引：0

作者：

Haensel, Leander ^{[1
]}

Ygartua, Carlos ^{[1
]}

Shu, Frank ^{[1
]}

Haupt, Ronny ^{[1
]}

Anderson, Michael ^{[2
]}

Birk, Felipe Tijiwa ^{[2
]}

Vaid, Alok ^{[2
]}

机构：

[1] KLA Tencor Corp, FaST Div, 1 Technol Dr, Milpitas, CA 95035 USA

[2] GLOBALFOUNDRIES, AMTD, Malta, NY 12020 USA

来源：

2013 24TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC) | 2013年

关键词：

Composition; SiGe; multi-layer; stack; spectroscopic ellipsometry; BBSE; metrology;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the development and implementation of a Broadband Spectroscopic Ellipsometry (BBSE) composition measurement to characterize a tri-layer stack consisting of 2 SiGe layers of different Germanium concentrations topped by an epitaxial Si layer. The designed experiment wafer set and the composition model development based on AES and XRD reference data are discussed. The spectral sensitivity of the composition model and the correlation to reference metrology are shown. Wafer to wafer and within wafer variation, stability and tool to tool matching performance are quantified based on the implementation of the composition model as an inline measurement for a 20nm development vehicle. The paper arrives at the conclusion that BBSE is a feasible high throughput metrology option for this application, while leaving room for improvement in future revisions of the model.

引用

页码：231 / 236

页数：6

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