The impurity states in InGaAsP/InP coaxial double quantum well wires with the effects of electric and magnetic fields

被引：0

作者：

Hu, Min ^{[1
]}

Wang, Hailong ^{[2
]}

Gong, Qian ^{[3
]}

机构：

[1] Qufu Normal Univ, Sch Cyber Sci & Engn, Qufu 273165, Shandong, Peoples R China

[2] Qufu Normal Univ, Coll Phys & Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Shandong, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 2021年 / 35卷 / 21期

基金：

中国国家自然科学基金;

关键词：

Coaxial double quantum well wires; electric field; magnetic field; hydrogenic donor impurity; HYDROGENIC DONOR IMPURITY; BINDING-ENERGIES; HYDROSTATIC-PRESSURE; CROSS-SECTION; TEMPERATURE; GROWTH; SPIN;

D O I：

10.1142/S0217984921503553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hydrogen donor impurity states are calculated in In0.65Ga0.35As0.75P0.25/InP coaxial double quantum well wires by the plane wave method under the theoretical framework of effective mass envelope function approximation. The binding energies of impurity in 1s state and 2p +/- state are obtained as the functions of impurity position, distance between the inner and outer quantum wires, magnetic and electric field strengths. Transition energies are calculated as the functions of impurity position, distance between the inner and outer quantum wires. The effects of quantum wire thickness and distance of quantum wires on impurity states are analyzed in detail. It is found that the effects of electric field and magnetic field on binding energy of 1s state are different for impurity located at different positions.

引用

页数：13

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