The impurity states in InGaAsP/InP coaxial double quantum well wires with the effects of electric and magnetic fields

被引：0

作者：

Hu, Min ^{[1
]}

Wang, Hailong ^{[2
]}

Gong, Qian ^{[3
]}

机构：

[1] Qufu Normal Univ, Sch Cyber Sci & Engn, Qufu 273165, Shandong, Peoples R China

[2] Qufu Normal Univ, Coll Phys & Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Shandong, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 2021年 / 35卷 / 21期

基金：

中国国家自然科学基金;

关键词：

Coaxial double quantum well wires; electric field; magnetic field; hydrogenic donor impurity; HYDROGENIC DONOR IMPURITY; BINDING-ENERGIES; HYDROSTATIC-PRESSURE; CROSS-SECTION; TEMPERATURE; GROWTH; SPIN;

D O I：

10.1142/S0217984921503553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hydrogen donor impurity states are calculated in In0.65Ga0.35As0.75P0.25/InP coaxial double quantum well wires by the plane wave method under the theoretical framework of effective mass envelope function approximation. The binding energies of impurity in 1s state and 2p +/- state are obtained as the functions of impurity position, distance between the inner and outer quantum wires, magnetic and electric field strengths. Transition energies are calculated as the functions of impurity position, distance between the inner and outer quantum wires. The effects of quantum wire thickness and distance of quantum wires on impurity states are analyzed in detail. It is found that the effects of electric field and magnetic field on binding energy of 1s state are different for impurity located at different positions.

引用

页数：13

共 50 条

[31] Coherent resonant tunnelling in an impurity quantum well in the presence of electric and strong magnetic fields
J Phys Condens Matter, 6 (1309-1322):
[32] Hydrogenic states in GaAs quantum-well wires under applied magnetic fields
Niculescu, E
2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 113 - 116
[33] Donor impurity states in coupled quantum well wires under hydrostatic pressure and applied electric field
Tangarife, E.
Mora-Ramos, M. E.
Duque, C. A.
SUPERLATTICES AND MICROSTRUCTURES, 2011, 49 (03) : 275 - 278
[34] Electric Field Effects on Resonant and Localized Impurity States in a Square Quantum Well
Abramov, Arnold
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2012, 9 (03) : 384 - 387
[35] InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation
CHEN Jie~1
2. The Key Lab. of Education Ministry on Radiation Beam and Materials Modification
Semiconductor Photonics and Technology, 2005, (04) : 3 - 6
[36] PHOTOLUMINESCENCE INVESTIGATION OF THE TRAPPING OF CARRIERS BY A QUANTUM WELL IN INGAASP INP DOUBLE HETEROSTRUCTURES
ALFEROV, ZI
GORELENOK, AT
GRUZDOV, VG
NIKITIN, LP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (11): : 1201 - 1204
[37] Hydrogenic impurity in a coaxial quantum well wire: Effect of different masses of wires and barriers
Mikhail, I. F. I.
El Sayed, S. B. A.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (09): : 2307 - 2313
[38] Lifetimes of impurity states in crossed magnetic and electric fields
Gyger, S
Martin, PA
JOURNAL OF MATHEMATICAL PHYSICS, 1999, 40 (07) : 3275 - 3282
[39] Stabilization of impurity states in crossed magnetic and electric fields
Krajewska, K
Kaminski, JZ
JOURNAL OF MATHEMATICAL PHYSICS, 2002, 43 (08) : 3937 - 3943
[40] External electric field effect on exciton binding energy in InGaAsP/InP cylindrical quantum wires
Wang, Hailong
Wang, Wenjuan
Gong, Qian
Wang, Shumin
PHYSICA B-CONDENSED MATTER, 2016, 503 : 117 - 120

← 1 2 3 4 5 →