A codoping method in GaN proposed by ab initio electronic-structure calculations

We propose a new type doping method, the "codoping method (doping n- and p-type dopants at the same time)" for the fabrication of high-conductivity p-type GaN with a wurtzite structure. Ab initio electronic-structure calculations predict that the co-incorporation of Be-Ga with O-N or Si-Ga in codoped p-type GaN produces high Be concentrations with stable ionic charge distributions markedly due to a decrease in the Madelung energy in contrast to p-type GaN doped with only Be.