A codoping method in GaN proposed by ab initio electronic-structure calculations

被引：14

作者：

Yamamoto, T

Katayama-Yoshida, H

机构：

[1] Osaka Univ, ISIR, Dept Condensed Matter Phys, Osaka 567, Japan

[2] Asahi Chem Ind Co Ltd, Dept Comp Sci, Fuji, Shizuoka 416, Japan

[3] Japan Sci & Technol Corp, PRESTO, Kawaguchi, Saitama 332, Japan

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

GaN; self-compensation; wide-band-gap semiconductors; electronic-band structures; the Madelung energy; a codoping method; FILMS;

D O I：

10.4028/www.scientific.net/MSF.258-263.1185

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a new type doping method, the "codoping method (doping n- and p-type dopants at the same time)" for the fabrication of high-conductivity p-type GaN with a wurtzite structure. Ab initio electronic-structure calculations predict that the co-incorporation of Be-Ga with O-N or Si-Ga in codoped p-type GaN produces high Be concentrations with stable ionic charge distributions markedly due to a decrease in the Madelung energy in contrast to p-type GaN doped with only Be.

引用

页码：1185 / 1190

页数：6

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