Record fT and fT+ fMAX performance of InP/InGaAs single heterojunction bipolar transistors

被引：11

作者：

Hafez, W ^{[1
]}

Lai, JW ^{[1
]}

Feng, M ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 10期

关键词：

D O I：

10.1049/el:20030534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record performance is reported for InP/InGaAs single heterojunction transistors. An f(T) of 382 GHz is reported on a 0.5 x 12 mum device, the highest for any bipolar device on any material system. Record f(T) + f(MAX) of 673 GHz was achieved on a 0.35 x 8 mum device.

引用

页码：811 / 813

页数：3

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