Record fT and fT+ fMAX performance of InP/InGaAs single heterojunction bipolar transistors

被引：11
|
作者：
Hafez, W [1 ]
Lai, JW [1 ]
Feng, M [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 10期
关键词：
D O I：
10.1049/el:20030534
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Record performance is reported for InP/InGaAs single heterojunction transistors. An f(T) of 382 GHz is reported on a 0.5 x 12 mum device, the highest for any bipolar device on any material system. Record f(T) + f(MAX) of 673 GHz was achieved on a 0.35 x 8 mum device.
引用
收藏
页码：811 / 813
页数：3
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