Hole spin dynamics in constant and alternating electric fields

被引：5
|
作者：
Dargys, A
Harrison, P
机构：
[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania
[2] Univ Leeds, IMP, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 04期
关键词：
D O I：
10.1088/0268-1242/18/4/309
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Intercollisional dynamics of hole spin, when free holes are subjected to an external electric field, is considered. Coherent evolution of spin projections and the population in valence bands is presented for dc and harmonic fields. Spin operators in the band representation are found and it is shown that there appears an uncertainty related with band degeneracy. The results obtained may be useful in the simulation of simultaneous spin and charge transport in p-type semiconductors, for example, by the Monte Carlo method.
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页码：247 / 252
页数：6
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