Tunable electrical and optical properties of hafnium nitride thin films

被引：27

作者：

Farrell, I. L. ^{[1
]}

Reeves, R. J. ^{[1
]}

Preston, A. R. H. ^{[2
]}

Ludbrook, B. M. ^{[2
]}

Downes, J. E. ^{[3
]}

Ruck, B. J. ^{[2
]}

Durbin, S. M. ^{[4
]}

机构：

[1] Univ Canterbury, Dept Phys & Astron, Christchurch 8140, New Zealand

[2] Victoria Univ, Sch Chem & Phys Sci, Wellington 6140, New Zealand

[3] Macquarie Univ, Dept Phys & Engn, N Ryde, NSW 2109, Australia

[4] Univ Canterbury, Dept Elect & Comp Engn, Christchurch 8140, New Zealand

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 07期

关键词：

band structure; hafnium compounds; plasma materials processing; pulsed laser deposition; thin films; X-ray absorption spectra; LAYERS;

D O I：

10.1063/1.3327329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.

引用

页数：3

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