The chemistry and physics of semiconductor nanowires

被引:200
|
作者
Yang, PD [1 ]
机构
[1] Univ Calif Berkeley, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
assembly; heterojunctions; nanowires; semiconductors;
D O I
10.1557/mrs2005.26
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The following article is based on the Outstanding Young Investigator Award presentation given by Peidong Yang of the University of California, Berkeley, on April 14, 2004, at the Materials Research Society Spring Meeting in San Francisco. Yang was cited for "innovative synthesis of a broad range of nanowires and nanowire-heterostructure materials, and the discovery of optically induced lasing in individual nanowire devices." One-dimensional narostructures are of both fundamental and technological interest. They not only exhibit interesting electronic and optical properties associated with their low dimensionality and the quantum confinement effect, but they also represent critical components in potential nanoscale devices. In this article, the vapor-liquid-solid crystal, growth mechanism will be briefly introduced for the general synthesis of nanowires of different compositions, sizes, and orientation. Unique properties, including light-emission and thermoelectricity, will be discussed. In addition to the recent extensive studies on "single-component" nanowires, of increasing importance is incorporating different interfaces and controlling doping profiles within individual single-crystalline nanowires. Epitaxial growth plays a significant role in fabricating such nanowire heterostructures. Recent research on superlattice nanowires and other nanostructures with horizontal junctions will be presented. The implication of these heterojunction nanowires in light-emission and energy conversion will be discussed. Ways to assemble these one-dimensional nanostructures will also be presented.
引用
收藏
页码:85 / 91
页数:7
相关论文
共 50 条
  • [11] Extending the Concept of Defect Chemistry from Semiconductor Physics to Electrochemistry
    Todorova, Mira
    Neugebauer, Joerg
    PHYSICAL REVIEW APPLIED, 2014, 1 (01):
  • [12] Semiconductor nanowires for 0D and 1D physics and applications
    Samuelson, L
    Thelander, C
    Björk, MT
    Borgström, M
    Deppert, K
    Dick, KA
    Hansen, AE
    Mårtensson, T
    Panev, N
    Persson, AI
    Seifert, W
    Sköld, N
    Larsson, MW
    Wallenberg, LR
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 25 (2-3): : 313 - 318
  • [13] Semiconductor nanowires
    Lu, Wei
    Lieber, Charles M.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (21) : R387 - R406
  • [14] Semiconductor Nanowires
    Jagadish, Chennupati
    Geelhaar, Lutz
    Gradecak, Silvija
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 7 (10): : 683 - 684
  • [15] Possible properties of positron states in physics and chemistry of a surface and in semiconductor nanotechnologies
    Grafutin, V. I.
    Svetlv-Prkp'ev, E. P.
    Timoshenkov, S. P.
    Kalugin, V. V.
    Artemov, E. I.
    INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 2007, 107 (14) : 2844 - 2848
  • [16] The physics of defect chemistry and the chemistry of defect physics
    Klein, Andreas
    Sudarikov, Denis
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2025, 27 (13) : 6390 - 6399
  • [17] Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering
    Kronik, L
    Shapira, Y
    SURFACE AND INTERFACE ANALYSIS, 2001, 31 (10) : 954 - 965
  • [18] CHEMISTRY AND PHYSICS OR CHEMISTRY
    FABBRI, G
    CHIMICA & L INDUSTRIA, 1984, 66 (01): : S2 - S2
  • [19] Semiconductor nanowires for thermoelectrics
    Li, Zhen
    Sun, Qiao
    Yao, Xiang Dong
    Zhu, Zhong Hua
    Lu, Gao Qing
    JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (43) : 22821 - 22831
  • [20] Semiconductor nanowires and nanotubes
    Law, M
    Goldberger, J
    Yang, PD
    ANNUAL REVIEW OF MATERIALS RESEARCH, 2004, 34 : 83 - 122