Non-linear electro thermal model of LDMOS power transistor coupled to 3D thermal model in a circuit simulator

被引：0
|
作者：
Guyonnet, M [1 ]
Sommet, R [1 ]
Quéré, R [1 ]
Bouisse, G [1 ]
机构：
[1] FREESCALE Semicond, F-31100 Toulouse, France
来源：
34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, we introduce a new approach for Electro Thermal modeling of power LDMOS transistor. The electrical description of each intrinsic component is done with 3D Bi-Cubic Splines. The electrical model is coupled to a 3D thermal model stemming from FEA simulation. This full 3D Electro Thermal model is used with the ADS circuit simulator.
引用
收藏
页码：573 / 576
页数：4
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