Non-linear electro thermal model of LDMOS power transistor coupled to 3D thermal model in a circuit simulator

被引：0
|
作者：
Guyonnet, M [1 ]
Sommet, R [1 ]
Quéré, R [1 ]
Bouisse, G [1 ]
机构：
[1] FREESCALE Semicond, F-31100 Toulouse, France
来源：
34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, we introduce a new approach for Electro Thermal modeling of power LDMOS transistor. The electrical description of each intrinsic component is done with 3D Bi-Cubic Splines. The electrical model is coupled to a 3D thermal model stemming from FEA simulation. This full 3D Electro Thermal model is used with the ADS circuit simulator.
引用
收藏
页码：573 / 576
页数：4
相关论文
共 50 条
  • [21] FERMIONS AND O(3)-NON-LINEAR SIGMA MODEL IN A 3D SPACETIME
    DONASCIMENTO, JRS
    DEMELLO, ERB
    JOURNAL OF PHYSICS G-NUCLEAR AND PARTICLE PHYSICS, 1993, 19 (01) : 55 - 66
  • [22] A Rapid Non-Linear Computation Model of Power Loss and Electro Thermal Behaviour of Three-Phase Inverters in EV Drivetrains
    Rasool, Haaris
    El Baghdadi, Mohamed
    Rauf, Abdul Manan
    Zhaksylyk, Assel
    Hegazy, Omar
    2020 INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS, ELECTRICAL DRIVES, AUTOMATION AND MOTION (SPEEDAM 2020), 2020, : 317 - 323
  • [23] Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's
    Saleh, Alaa
    El Rafei, Abdel Kader
    Dieng, Mountakha
    Reveyrand, Tibault
    Sommet, Raphael
    Nebus, Jean-Michel
    Quere, Raymond
    INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2012, 4 (06) : 569 - 578
  • [24] A new form of the non-linear compact thermal model of the IGBT
    Gorecki, Krzysztof
    Gorecki, Pawel
    PROCEEDINGS 2018 IEEE 12TH INTERNATIONAL CONFERENCE ON COMPATIBILITY, POWER ELECTRONICS AND POWER ENGINEERING (CPE-POWERENG 2018), 2018,
  • [25] Analytical Electro-Thermal Model and 3-D Thermal Resistance Network for SMD-Based Printed Circuit Board Power Converters
    Piovesan, Talis
    Prado, Edemar de Oliveira
    Sartori, Hamiltom Confortin
    Pinheiro, Jose Renes
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2024, 12 (05) : 4979 - 4992
  • [26] FPGA implementation of 3-D thermal model simulator
    Pardo, F.
    Lopez, P.
    Cabello, D.
    Balsi, M.
    2006 INTERNATIONAL CONFERENCE ON FIELD PROGRAMMABLE LOGIC AND APPLICATIONS, PROCEEDINGS, 2006, : 633 - 636
  • [27] Thermal Modeling of the Non-Linear Thermal Resistance of the SiGe HBT using the HICUM Model
    Shah, Valay D.
    Carter, Ronald L.
    Davis, W. Alan
    Russell, Howard T.
    Chen, Wei
    Krakowski, Tracey L.
    2016 IEEE DALLAS CIRCUITS AND SYSTEMS CONFERENCE (DCAS), 2016,
  • [28] An analytical model to predict the short-circuit thermal failure in SOI LDMOS with linear doping profile
    Roig, J
    Flores, D
    Jordà, X
    Urresti, J
    Vellvehi, M
    Rebollo, J
    Millán, J
    2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, 2004, : 137 - 140
  • [29] Non-Linear Electro-Thermal AlGaN/GaN Model Including Large-Signal Dynamic Thermal-Trapping Effects
    Benvegnu, Agostino
    Jardel, Olivier
    Laurent, Sylvain
    Barataud, Denis
    Meneghini, Matteo
    Zanoni, Enrico
    Quere, Raymond
    2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
  • [30] Electro-thermal analysis of IGBT module from 3D CAD model
    Wang, Hui
    Gong, Ding
    Shen, Chen
    17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019), 2019,
12345