Spin-photon entangling diode

被引：11
|
作者：
Flindt, Christian [1 ]
Sorensen, Anders S.
Lukin, Mikhail D.
Taylor, Jacob M.
机构：
[1] Tech Univ Denmark, MIC Dept Micro & Nanotechnol, DK-2800 Kongens Lyngby, Denmark
[2] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark
[3] QUANTOP, DK-2100 Copenhagen, Denmark
[4] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[5] MIT, Dept Phys, Cambridge, MA 02139 USA
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 24期
关键词：
D O I：
10.1103/PhysRevLett.98.240501
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of the diode bias and local gating allow for the generation of single photons that are entangled with a robust quantum memory based on the electron spins. Practical performance of this approach to controlled spin-photon entanglement is analyzed.
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页数：4
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