Spin-photon entangling diode

被引：11

作者：

Flindt, Christian ^{[1
]}

Sorensen, Anders S.

Lukin, Mikhail D.

Taylor, Jacob M.

机构：

[1] Tech Univ Denmark, MIC Dept Micro & Nanotechnol, DK-2800 Kongens Lyngby, Denmark

[2] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark

[3] QUANTOP, DK-2100 Copenhagen, Denmark

[4] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[5] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.98.240501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of the diode bias and local gating allow for the generation of single photons that are entangled with a robust quantum memory based on the electron spins. Practical performance of this approach to controlled spin-photon entanglement is analyzed.

引用

页数：4

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