Novel Capacitive Pressure Sensor

被引：25
|
作者：
Bakhoum, Ezzat G. [1 ]
Cheng, Marvin H. M. [2 ]
机构：
[1] Univ W Florida, Dept Elect & Comp Engn, Pensacola, FL 32514 USA
[2] Georgia So Univ, Coll Sci & Technol, Statesboro, GA 30460 USA
来源：
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2010年 / 19卷 / 03期
关键词：
Capacitive pressure sensors; sensors; DEPOSITION;
D O I：
10.1109/JMEMS.2010.2047632
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new microelectromechanical-systems capacitive pressure sensor with extremely high sensitivity (2.24 mu F/kPa) is introduced. The sensor essentially consists of a small drop of mercury and a flat aluminum electrode that are separated by a 1 mu m-thick layer of Barium Strontium Titanate (a high dielectric-constant ceramic). The assembly constitutes a parallel-plate capacitor where the surface area of the electrodes is variable to a high degree. The mercury drop is pressured by a small corrugated metal diaphragm. As the electrode area of the parallel-plate capacitor varies, a total change in capacitance of more than 6 mu F is obtained.
引用
收藏
页码：443 / 450
页数：8
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