Perpendicular Magnetic Anisotropy and Easy Cone State in Ta/Co60Fe20B20/MgO

被引:63
|
作者
Shaw, Justin M. [1 ]
Nembach, Hans T. [1 ]
Weiler, Mathias [1 ,3 ]
Silva, T. J. [1 ]
Schoen, Martin [1 ]
Sun, Jonathan Z. [2 ]
Worledge, Daniel C. [2 ]
机构
[1] NIST, Boulder, CO 80305 USA
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[3] Walther Meissner Inst Tieftemp Forsch, D-85748 Garching, Germany
关键词
Magnetodynamics; ferromagnetic resonance; magnetic anisotropy; magnetic switching; spin-transfer torque; magnetic random-access memory; TRANSITION; MOMENT;
D O I
10.1109/LMAG.2015.2438773
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We used broadband ferromagnetic resonance (FMR) spectroscopy to measure the second- and fourth-order perpendicular magnetic anisotropies in Ta/(t) Co60Fe20B20/MgO layers over a Co60Fe20B20 thickness range of 5.0 nm >= t >= 0.8 nm. For t > 1.0 nm, the easy axis is in the plane of the film, but when t < 1.0 nm, the easy axis is directed perpendicular to the surface. However, the presence of a substantial higher order perpendicular anisotropy results in an easy cone state when t = 1.0 nm. Angular-dependent FMR measurements verify the presence of the easy cone state. Measurement of the spectroscopic g-factor via FMR for both the in-plane and out-of-plane geometries suggests a significant change in electronic and/or physical structure at t approximate to 1.0 nm thickness.
引用
收藏
页数:4
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