Magnetodynamics;
ferromagnetic resonance;
magnetic anisotropy;
magnetic switching;
spin-transfer torque;
magnetic random-access memory;
TRANSITION;
MOMENT;
D O I:
10.1109/LMAG.2015.2438773
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We used broadband ferromagnetic resonance (FMR) spectroscopy to measure the second- and fourth-order perpendicular magnetic anisotropies in Ta/(t) Co60Fe20B20/MgO layers over a Co60Fe20B20 thickness range of 5.0 nm >= t >= 0.8 nm. For t > 1.0 nm, the easy axis is in the plane of the film, but when t < 1.0 nm, the easy axis is directed perpendicular to the surface. However, the presence of a substantial higher order perpendicular anisotropy results in an easy cone state when t = 1.0 nm. Angular-dependent FMR measurements verify the presence of the easy cone state. Measurement of the spectroscopic g-factor via FMR for both the in-plane and out-of-plane geometries suggests a significant change in electronic and/or physical structure at t approximate to 1.0 nm thickness.
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
SK Hynix Semicond Inc, Div Res & Dev, Gyeonggi Do 17336, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
Park, Kyung-Woong
Park, June-Young
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
Park, June-Young
Baek, Seung-heon Chris
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
Baek, Seung-heon Chris
Kim, Dae-Hoon
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
Kim, Dae-Hoon
Seo, Soo-Man
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SK Hynix Semicond Inc, Div Res & Dev, Gyeonggi Do 17336, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
Seo, Soo-Man
Chung, Sung-Woong
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SK Hynix Semicond Inc, Div Res & Dev, Gyeonggi Do 17336, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
Chung, Sung-Woong
Park, Byong-Guk
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
机构:
Indian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India
Hait, Soumyarup
Husain, Sajid
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Indian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India
Univ Paris Saclay, CNRS, Unite Mixte Phys, Thales, F-91767 Palaiseau, FranceIndian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India
Husain, Sajid
Barwal, Vineet
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Indian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India
Natl Inst Mat Sci NIMS, Ctr Magnet & Spintron Mat CMSM, Tsukuba, Ibaraki, JapanIndian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India
Barwal, Vineet
Pandey, Lalit
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Indian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India
Pandey, Lalit
Sharma, Nikita
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Indian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India
Sharma, Nikita
Gupta, Nanhe Kumar
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Indian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India
Gupta, Nanhe Kumar
Kumar, Nakul
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Indian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India
Kumar, Nakul
Chaudhary, Sujeet
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Indian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, IndiaIndian Inst Technol Delhi, Thin Film Lab, New Delhi 110016, India