Optical properties of type ZnO and ZnMnO doped by n and/or as acceptors

被引：0
|
作者：
Przezdziecka, E. [1 ]
Kaminska, E. [1 ]
Korona, K. P. [1 ]
Dynowska, E. [1 ]
Dobrowolski, W. [1 ]
Jakiela, R. [1 ]
Pacuski, W. [1 ]
Klopotowski, L. [1 ]
Kossut, J. [1 ]
机构：
[1] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
ZnO; p-type doping; Zeeman effect;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
ZnO and Zn1-xMnxO doped with N and/or As were fabricated by thermal oxidation of ZnTe or Zn1-xMnxTe films grown by ME on different substrates. Hall effect measurements demonstrated p-type conductivity with the high hole concentration. We were able to distinguish between the luminescence of excitons bound either to nitrogen or arsenic acceptor. We also present a magneto-optical study of p-type Zn1-xMnxO diluted magnetic semiconductor (DMS). Photoluminescence spectra were used to determine the "giant" Zeeman splitting and to estimate the exchange integral N-0(alpha beta)similar to 0.1eV. This is an extremely small value for a II-VI DMS, and we discuss possible reasons for this effect.
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页码：339 / +
页数：2
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