Optical properties of p-type ZnO doped by as ion implantation

被引：0
|
作者：
Jeong, TS [1 ]
Youn, CJ [1 ]
Han, MS [1 ]
Park, YS [1 ]
Lee, WS [1 ]
机构：
[1] Jeonbuk Natl Univ, SPRC, Jeonju 561756, South Korea
来源：
Physics of Semiconductors, Pts A and B | 2005年 / 772卷
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
As-doped p-type ZnO has been achieved by ion implantation. The As-related optical properties were analyzed by using secondary ion mass spectrometry, the Raman scattering, and the photoluminescence experiments. From the I-V measurement, the behavior of rectifying on these samples is confirmed.
引用
收藏
页码：203 / 204
页数：2
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