Optical properties of p-type ZnO doped by as ion implantation

被引：0

作者：

Jeong, TS ^{[1
]}

Youn, CJ ^{[1
]}

Han, MS ^{[1
]}

Park, YS ^{[1
]}

Lee, WS ^{[1
]}

机构：

[1] Jeonbuk Natl Univ, SPRC, Jeonju 561756, South Korea

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

As-doped p-type ZnO has been achieved by ion implantation. The As-related optical properties were analyzed by using secondary ion mass spectrometry, the Raman scattering, and the photoluminescence experiments. From the I-V measurement, the behavior of rectifying on these samples is confirmed.

引用

页码：203 / 204

页数：2

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