Optical properties of type ZnO and ZnMnO doped by n and/or as acceptors

被引：0

作者：

Przezdziecka, E. ^{[1
]}

Kaminska, E. ^{[1
]}

Korona, K. P. ^{[1
]}

Dynowska, E. ^{[1
]}

Dobrowolski, W. ^{[1
]}

Jakiela, R. ^{[1
]}

Pacuski, W. ^{[1
]}

Klopotowski, L. ^{[1
]}

Kossut, J. ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

ZnO; p-type doping; Zeeman effect;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO and Zn1-xMnxO doped with N and/or As were fabricated by thermal oxidation of ZnTe or Zn1-xMnxTe films grown by ME on different substrates. Hall effect measurements demonstrated p-type conductivity with the high hole concentration. We were able to distinguish between the luminescence of excitons bound either to nitrogen or arsenic acceptor. We also present a magneto-optical study of p-type Zn1-xMnxO diluted magnetic semiconductor (DMS). Photoluminescence spectra were used to determine the "giant" Zeeman splitting and to estimate the exchange integral N-0(alpha beta)similar to 0.1eV. This is an extremely small value for a II-VI DMS, and we discuss possible reasons for this effect.

引用

页码：339 / +

页数：2

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