Local Droplet Etching - Nanoholes, Quantum Dots, And Air-Gap Heterostructures

被引:0
|
作者
Heyn, Ch [1 ]
Sonnenberg, D. [1 ]
Graf, A. [1 ]
Kerbst, J. [1 ]
Stemmann, A. [1 ]
Hansen, W. [1 ]
机构
[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany
关键词
Local droplet etching; quantum dot; air-gap heterostructure;
D O I
10.1063/1.4878285
中图分类号
O59 [应用物理学];
学科分类号
摘要
Local droplet etching (LDE) allows the self-organized generation of nanoholes in semiconductor surfaces and is fully compatible with molecular beam epitaxy (MBE). The influence of the process parameters as well as of droplet and substrate materials on the LDE nanohole morphology is discussed. Furthermore, recent applications of LDE, the fabrication of quantum dots by hole filling and the creation of air-gap heterostructures are addressed.
引用
收藏
页码:91 / 94
页数:4
相关论文
共 50 条
  • [41] Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters
    Gajjela, Raja Sekhar Reddy
    Sala, Elisa Maddalena
    Heffernan, Jon
    Koenraad, Paul M.
    ACS APPLIED NANO MATERIALS, 2022, 5 (06) : 8070 - 8079
  • [42] Micromachined air-gap structure MEMS acoustic sensor using reproducible high-speed lateral etching and CMP process
    Ko, Sang Choon
    Jun, Chi-Hoon
    Jang, Won Ick
    Choi, Chang-Auck
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2006, 16 (10) : 2071 - 2076
  • [43] A new model of rotor eccentricity in induction motors considering the local air-gap over-flux concentration
    Ghoggal, Adel
    INTERNATIONAL JOURNAL OF APPLIED ELECTROMAGNETICS AND MECHANICS, 2013, 42 (04) : 519 - 537
  • [44] Type-II recombination dynamics of tensile-strained GaP quantum dots in GaAs grown by droplet epitaxy
    Prongjit, Patchareewan
    Ratanathammaphan, Somchai
    Ha, Neul
    Mano, Takaaki
    Sakoda, Kazuaki
    Kuroda, Takashi
    APPLIED PHYSICS LETTERS, 2016, 109 (17)
  • [45] Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix
    Mukhin, M. S.
    Terent'ev, Ya. V.
    Golub, L. E.
    Nestoklon, M. O.
    Meltser, B. Ya.
    Semenov, A. N.
    Solov'ev, V. A.
    Sitnikova, A. A.
    Toropov, A. A.
    Ivanov, S. V.
    ACTA PHYSICA POLONICA A, 2011, 120 (05) : 868 - 869
  • [46] Critical Aluminum Etch Material Amount for Local Droplet-Etched Nanohole-Based GaAs Quantum Dots
    Kruck, Timo
    Babin, Hans Georg
    Wieck, Andreas D.
    Ludwig, Arne
    CRYSTALS, 2024, 14 (08)
  • [47] Graphene quantum dots modified polyvinylidenefluride (PVDF) nanofibrous membranes with enhanced performance for air Gap membrane distillation
    Jafari, Arman
    Kebria, Mohammad Reza Shirzad
    Rahimpour, Ahmad
    Bakeri, Gholamreza
    CHEMICAL ENGINEERING AND PROCESSING-PROCESS INTENSIFICATION, 2018, 126 : 222 - 231
  • [48] Platelike WO3 sensitized with CdS quantum dots heterostructures for photoelectrochemical dynamic sensing of H2O2 based on enzymatic etching
    Wang, Yanhu
    Gao, Chaomin
    Ge, Shenguang
    Yu, Jinghua
    Yan, Mei
    BIOSENSORS & BIOELECTRONICS, 2016, 85 : 205 - 211
  • [49] Enhanced Internal Quantum Efficiency and Light Extraction Efficiency of Light-emitting Diodes with Air-gap Photonic Crystal Structure Formed by Tungsten Nano-mask
    Cho, Chu-Young
    Hong, Sang-Hyun
    Kim, Ki Seok
    Jung, Gun-Young
    Park, Seong-Ju
    BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2014, 35 (03) : 705 - 708
  • [50] Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots
    D. S. Abramkin
    V. T. Shamirzaev
    M. A. Putyato
    A. K. Gutakovskii
    T. S. Shamirzaev
    JETP Letters, 2014, 99 : 76 - 81