In-line monitoring of HF last cleaning of implanted and non-implanted silicon surfaces by non-contact surface charge measurements

Silicon surfaces after HF-last cleaning were characterized by space charge measurements. A satisfactory good agreement was confirmed between space charge parameters and cleaning conditions. The growth of native oxide after HF-last cleaning was monitored comparatively with in-situ ellipsometry. The presence of top oxide layer on ion-implanted wafers were detected precisely. The most distinguished parameter was found to be minority carrier recombination lifetime.