Effect of oxygen and nitrogen additions on silicon nitride reactive ion etching in fluorine containing plasmas

被引：0

作者：

Reyes-Betanzo, C ^{[1
]}

Moshkalyov, SA ^{[1
]}

Ramos, ACS ^{[1
]}

Cotta, MA ^{[1
]}

Swart, JW ^{[1
]}

机构：

[1] Univ Estadual Campinas, CCS, BR-13083970 Campinas, SP, Brazil

来源：

PLASMA PROCESSING XIV | 2002年 / 2002卷 / 17期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Results of a comparative study Of Si3N4, SiO2 and Si reactive ion etching in various fluorine-containing plasmas (CF4/O-2/N-2, SF6/O-2/N-2, CF4/H-2, SF6/CH4/N-2 and SF6/CH4/N-2/O-2) are presented. Possible mechanisms involved in etching of the above, mentioned materials are discussed. Plasma-induced structural surface damages have been analyzed using AFM. It has been shown that even small oxygen additions improve significantly etched surface morphology eliminating micromasking.

引用

页码：263 / 276

页数：14

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