Electrical properties in Si/Si1-xGex/Si p-type modulation doped heterostructures

被引：0

作者：

Hwang, YT ^{[1
]}

Kim, HS ^{[1
]}

Woo, SJ ^{[1
]}

Lim, SH ^{[1
]}

Lee, HJ ^{[1
]}

机构：

[1] JEONBUK NATL UNIV,DEPT PHYS,JEONJU 560756,SOUTH KOREA

来源：

COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Si/Si0.79Ge0.21 p-type modulation-doped single heterostructures were grown by molecular beam epitaxy with different growth temperatures and spacer layer thicknesses. The growth temperature dependence of hole mobility at low temperature is examined in the temperature range from 530 to 730 degrees C. The hole mobility increases with increasing growth temperature up to 680 degrees C and then decreases at higher growth temperature. This demonstrates that the dependence of hole mobility on growth temperature may be ascribed to the improvement of interface with increasing temperature.

引用

页码：497 / 500

页数：4

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