Stability of single and tandem junction a-Si:H solar cells grown using the ECR process

被引:1
|
作者
Dalal, VL [1 ]
Maxson, T [1 ]
Girvan, R [1 ]
Haroon, S [1 ]
机构
[1] Iowa State Univ Sci & Technol, Microelect Res Ctr, Ames, IA 50011 USA
关键词
D O I
10.1557/PROC-467-813
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:Wa-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). We show that devices with high fill factors can be made using the H-ECR process. We also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show very little degradation even after 500 hours of illumination under 2 x sunlight illumination.
引用
收藏
页码:813 / 817
页数:5
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