Stability of single and tandem junction a-Si:H solar cells grown using the ECR process

被引：1

作者：

Dalal, VL ^{[1
]}

Maxson, T ^{[1
]}

Girvan, R ^{[1
]}

Haroon, S ^{[1
]}

机构：

[1] Iowa State Univ Sci & Technol, Microelect Res Ctr, Ames, IA 50011 USA

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-813

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:Wa-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). We show that devices with high fill factors can be made using the H-ECR process. We also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show very little degradation even after 500 hours of illumination under 2 x sunlight illumination.

引用

页码：813 / 817

页数：5

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