Stability of single and tandem junction a-Si:H solar cells grown using the ECR process

被引：1

作者：

Dalal, VL ^{[1
]}

Maxson, T ^{[1
]}

Girvan, R ^{[1
]}

Haroon, S ^{[1
]}

机构：

[1] Iowa State Univ Sci & Technol, Microelect Res Ctr, Ames, IA 50011 USA

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-813

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:Wa-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). We show that devices with high fill factors can be made using the H-ECR process. We also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show very little degradation even after 500 hours of illumination under 2 x sunlight illumination.

引用

页码：813 / 817

页数：5

共 50 条

[1] Analysis of single junction a-Si:H solar cells grown on different TCO's
Prusakova, Lucie
Flickyngerova, Sona
Fischer, Marinus
Novotny, Ivan
Tijssen, Martijn
Netrvalova, Marie
Zeman, Miro
Tvarozek, Vladimir
Sutta, Pavol
VACUUM, 2012, 86 (06) : 765 - 768
[2] Improved stability in ECR-deposited a-Si solar cells
Dalal, V
Kaushal, S
Girvan, R
Hariasra, S
Sipahi, L
CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 1069 - 1072
[3] Stability of a-Si:H solar cells deposited by Ar-treatment or by ECR techniques
Ohkawa, K
Shimizu, S
Sato, H
Komaru, T
Futako, W
Kamiya, T
Fortmann, CM
Shimizu, I
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) : 297 - 303
[4] Large area PECVD of a-Si:H/a-Si:H tandem solar cells
Gabriel, Onno
Kirner, Simon
Leendertz, Caspar
Gerhardt, Mario
Heidelberg, Andreas
Bloess, Harald
Schlatmann, Rutger
Rech, Bernd
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 10, 2011, 8 (10): : 2982 - 2985
[5] a-Si: H/a-Si: H/μc-Si: H triple junction solar cells
Zheng Xin-Xia
Zhang Xiao-Dan
Yang Su-Su
Wang Guang-Hong
Xu Sheng-Zhi
Wei Chang-Chun
Sun Jian
Geng Xin-Hua
Xiong Shao-Zhen
Zhao Ying
ACTA PHYSICA SINICA, 2011, 60 (06)
[6] Single junction a-Si:H solar cell with a-Si:H/nc-Si:H/a-Si:H quantum wells
Gupta, Ankur
Vashistha, Manvendra
Sharma, Pratibha
THIN SOLID FILMS, 2014, 550 : 643 - 648
[7] Effect of oxide treatment at the microcrystalline tunnel junction of a-Si:H/a-Si:H tandem cells
Rath, JK
Rubinelli, FA
Schropp, REI
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 1129 - 1133
[8] Optical modelling of single junction a-Si:H solar cells with textured interfaces
Búc, D
Zeman, M
Metselaar, JW
ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 1998, : 203 - 206
[9] Simulation of a-Si:H Dual Junction Solar Cells
Garcia-Rivera, A.
Comesana, E.
Garcia-Loureiro, A. J.
Valin, R.
Rodriguez, J. A.
Vetter, M.
PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013), 2013, : 373 - 376
[10] Properties of a-Si:H and a-(Si,Ge):H solar cells prepared using ECR deposition techniques
Dalal, VL
Maxson, T
Han, K
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 695 - 698

← 1 2 3 4 5 →