Modelling plasma-induced hydrogen profiles in boron-doped and near-intrinsic silicon

被引：10
|
作者：
Voronkov, Vladimir V. [1 ]
Falster, Robert [1 ]
机构：
[1] SunEdisonc Semicond, Via Nazl 59, I-39012 Merano, Italy
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 07期
关键词：
boron; diffusion; hydrogen; silicon; SINGLE-CRYSTAL SILICON; N-TYPE; P-TYPE; DIFFUSION; PASSIVATION;
D O I：
10.1002/pssa.201700287
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Reported depth profiles of hydrogen (deuterium) in silicon, created by exposure to plasma, were re-analysed on the basis of modern knowledge of the properties of atomic and dimeric hydrogen species. In boron-doped samples, the profiles allow to extract the equilibrium constant for the boron passivation reaction and the binding energy of the HB defect, 0.75eV. In the near-intrinsic samples the profiles shape suggests two independent in-diffusion and pairing processes: one is by fast dimers, and the other - by neutral monomers that are reversibly trapped by some impurity, probably carbon. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数：6
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