Modelling plasma-induced hydrogen profiles in boron-doped and near-intrinsic silicon

被引：10

作者：

Voronkov, Vladimir V. ^{[1
]}

Falster, Robert ^{[1
]}

机构：

[1] SunEdisonc Semicond, Via Nazl 59, I-39012 Merano, Italy

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 07期

关键词：

boron; diffusion; hydrogen; silicon; SINGLE-CRYSTAL SILICON; N-TYPE; P-TYPE; DIFFUSION; PASSIVATION;

D O I：

10.1002/pssa.201700287

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reported depth profiles of hydrogen (deuterium) in silicon, created by exposure to plasma, were re-analysed on the basis of modern knowledge of the properties of atomic and dimeric hydrogen species. In boron-doped samples, the profiles allow to extract the equilibrium constant for the boron passivation reaction and the binding energy of the HB defect, 0.75eV. In the near-intrinsic samples the profiles shape suggests two independent in-diffusion and pairing processes: one is by fast dimers, and the other - by neutral monomers that are reversibly trapped by some impurity, probably carbon. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：6