Fully/partially suspended gate SiC-based FET for power applications

被引：0

作者：

Nayak, Suvendu ^{[1
]}

Lodha, Saurabh ^{[1
]}

Ganguly, Swaroop ^{[1
]}

机构：

[1] Indian Inst Technol, Elect Engn Dept, Mumbai 400076, Maharashtra, India

来源：

2021 IEEE LATIN AMERICA ELECTRON DEVICES CONFERENCE (LAEDC) | 2021年

关键词：

NEMFET; Interface; Traps; Suspended; SiC; MOSFETS; DESIGN;

D O I：

10.1109/LAEDC51812.2021.9437932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully/partially suspended gate can overcome the issue of low channel mobility due to interface traps at the Silicon Carbide (SiC) and Silicon Dioxide (SiO 2) interface of a SiC-based DMOS. TCAD simulations (with a deck calibrated to experimental data for SiC) confirms that a suspended gate structure with Air or hybrid dielectrics (stack of Air and SiO 2) provides substantial performance enhancement. The device design (Dielectric spacing) is optimized via simulations. With experimentally reported densities of interface traps the output current indicate that they have a negligible effect on the device performance.

引用

页数：4

共 50 条

[31] Dual Gate ClampDRIVE SiC FET Based Traction Inverter Design Demonstration
Qu, Shusun
Bhalla, Anup
2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE, 2023,
[32] An SiC-Based Half-Bridge Module With an Improved Hybrid Packaging Method for High Power Density Applications
Chen, Cai
Chen, Yu
Li, Yuxiong
Huang, Zhizhao
Liu, Teng
Kang, Yong
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2017, 64 (11) : 8980 - 8991
[33] A SiC-Based Matrix Converter Topology for Inductive Power Transfer System
Nguyen Xuan Bac
Vilathgamuwa, D. Mahinda
Madawala, Udaya K.
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (08) : 4029 - 4038
[34] GaN Nanotube FET With Embedded Gate for High Performance, Low Power Applications
Han, Ke
Li, Jiawei
Deng, Zhongliang
Zhang, Yannan
Long, Shanglin
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 : 925 - 929
[35] A novel SiC J-FET gate drive circuit for Sparse Matrix Converter applications
Heldwein, ML
Kolar, JW
APEC 2004: NINETEENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3, 2004, : 116 - 121
[36] A Passive Component Based Gate Drive Scheme for Negative Gate Voltage Spike Mitigation in a SiC-Based Dual-Active Bridge
Tian, Yidong
Yang, Xu
Xie, Ruiliang
Huang, Lang
Liu, Tao
Wang, Jianpeng
Chen, Wenjie
Hao, Xiang
2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2018, : 1841 - 1845
[37] A Tool for Evaluating the Performance of SiC-Based Bidirectional Battery Chargers for Automotive Applications
Aiello, Giuseppe
Cacciato, Mario
Gennaro, Francesco
Rizzo, Santi Agatino
Scarcella, Giuseppe
Scelba, Giacomo
ENERGIES, 2020, 13 (24)
[38] Novel Silicon-Based Tunneling FET with Junction Engineering and Gate Configuration for Low Power Applications (invited)
Huang, Ru
Huang, Qianqian
Zhan, Zhan
Wu, Chunlei
Qiu, Yingxin
Wang, Yangyuan
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2013,
[39] Motor Bearing Current Characterization in SiC-based Variable Frequency Drive Applications
von Jouanne, Annette
Collin, Ryan
Stephens, Madeline
Miao, Yu
Thayil, Brian
Li, Caleb
Agamloh, Emmanuel
Yokochi, Alex
2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 2718 - 2725
[40] Advances of SiC-based MOS capacitor hydrogen sensors for harsh environment applications
Soo, Mun Teng
Cheong, Kuan Yew
Noor, Ahmad Fauzi Mohd
SENSORS AND ACTUATORS B-CHEMICAL, 2010, 151 (01): : 39 - 55

← 1 2 3 4 5 →