Dislocation structure in coarse-grained copper after ion implantation

被引：0

作者：

Sharkeev, YP ^{[1
]}

Girsova, NV ^{[1
]}

Ryabchikov, AI ^{[1
]}

Kozlov, EV ^{[1
]}

Perevalova, OB ^{[1
]}

Brown, IG ^{[1
]}

Yao, XY ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST STRENGTH PHYS & MAT SCI,TOMSK 634048,RUSSIA

来源：

ION BEAM MODIFICATION OF MATERIALS | 1996年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：532 / 537

页数：6

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