Dislocation structure in coarse-grained copper after ion implantation

被引：0
|
作者：
Sharkeev, YP [1 ]
Girsova, NV [1 ]
Ryabchikov, AI [1 ]
Kozlov, EV [1 ]
Perevalova, OB [1 ]
Brown, IG [1 ]
Yao, XY [1 ]
机构：
[1] RUSSIAN ACAD SCI,INST STRENGTH PHYS & MAT SCI,TOMSK 634048,RUSSIA
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：532 / 537
页数：6
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