The Effect of Annealing Pressure on Perovskite Films and Its Thin-Film Field-Effect Transistors' Performance

被引：6
|
作者：
Zhou, Zhou [1 ]
Guo, Ning [1 ]
Peng, Yuze [1 ]
Tang, Linlin [1 ]
Zhang, Jianjun [1 ]
Cai, Hongkun [1 ]
Ni, Jian [1 ]
Sun, Yanyan [2 ]
Li, Juan [1 ]
机构：
[1] Nankai Univ, Inst Photoelect, Tianjin Key Lab Opt Elect Thin Film Devices & Tec, Tianjin 300071, Peoples R China
[2] Tianjin Third Cent Hosp Tianjin, Dept Gynecol, Tianjin 300170, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 22期
基金：
中国国家自然科学基金;
关键词：
annealing pressure; organic-inorganic hybrid perovskites; thin-film transistors; HALIDE PEROVSKITES; SOLAR-CELLS; LIGHT; MOBILITIES; CRYSTALLIZATION; EFFICIENCY; KINETICS;
D O I：
10.1002/pssa.201900434
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of annealing pressure on the properties of organic-inorganic hybrid perovskite is investigated. A novel and facile low-pressure annealing strategy is proposed to obtain high-quality perovskite films with full coverage, micrometer-sized grains, and small roughness. Herein, it is found that a low-pressure annealing environment is favorable for the volatilization of the residual solvent in the initial film to further improve the nucleation rate of the perovskite. The grain size has a great correlation with the annealing pressure and time. As a result, the thin-film field-effect transistors fabricated by this optimized film exhibit a relatively high field-effect mobility of 1.8 x 10(-2) cm(2) Vs(-1). Herein, it is significant that fabricating high-quality perovskite films by the solution process in air is made possible.
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收藏
页数：7
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